Optically triggered infrared photodetector.

نویسندگان

  • Íñigo Ramiro
  • Antonio Martí
  • Elisa Antolín
  • Esther López
  • Alejandro Datas
  • Antonio Luque
  • José M Ripalda
  • Yolanda González
چکیده

We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems ( Rogalski, A.; Antoszewski, J.; Faraone, L. J. Appl. Phys. 2009, 105 (9), 091101).

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP ...

متن کامل

Impressive Reduction of Dark Current in InSb Infrared Photodetector to achieve High Temperature Performance

Infrared photo detectors have vast and promising applications in military,industrial and other fields. In this paper, we present a method for improving theperformance of an infrared photodetector based on an InSb substance. To achieve goodperformance at high temperatures, thermal noise and intrusive currents should bereduced. For this purpose, a five-layer hetero structu...

متن کامل

Broadband, Polarization-Sensitive Photodetector Based on Optically-Thick Films of Macroscopically Long, Dense, and Aligned Carbon Nanotubes

Increasing performance demands on photodetectors and solar cells require the development of entirely new materials and technological approaches. We report on the fabrication and optoelectronic characterization of a photodetector based on optically-thick films of dense, aligned, and macroscopically long single-wall carbon nanotubes. The photodetector exhibits broadband response from the visible ...

متن کامل

The Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector

In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled t...

متن کامل

Impact of optical antenna and plasmonics on infrared imagers

The advent of nanophotonics allows devising and fabricating optical antenna as the advanced optical structures that can enhance light–matter interaction in quantum structures such as quantum wells. Improving infrared photodetector performance is discussed theoretically in this paper. We also investigate our recent demonstration of optical antenna integrated on quantum well infrared photodetecto...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Nano letters

دوره 15 1  شماره 

صفحات  -

تاریخ انتشار 2015